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Samsung 1TB MZ-V9S1T0BW 990 EVO Plus M.2 2280 NVMe PCIe SSD
| Specification | Detail |
|---|---|
| Application | Client PCs |
| Interface | PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
| Dimension (W×H×D) | 80.15 x 22.15 x 2.38 mm |
| Performance (Sequential Read) | Up to 7,150 MB/s * |
| Performance (Sequential Write) | Up to 6,300 MB/s * |
| Weight | Maximum 9.0 g |
| Rated Capacity | 1,000 GB (1 GB = 1 billion bytes, IDEMA) |
| Form Factor | M.2 (2280) |
| Storage Memory | Samsung V‑NAND TLC |
| Controller | Samsung in‑house controller |
| Cache Memory | Host Memory Buffer (HMB) |
| TRIM Support | Supported |
| S.M.A.R.T Support | Supported |
| Garbage Collection | Auto GC Algorithm |
| Encryption | AES 256‑bit (Class 0) TCG/Opal IEEE1667 |
| WWN Support | Not supported |
| Device Sleep Mode | Supported |
| Random Read (4 KB, QD32) | Up to 850,000 IOPS * |
| Random Write (4 KB, QD32) | Up to 1,350,000 IOPS * |
| Average Power Consumption | Read 4.3 W / Write 4.2 W * |
| Idle Power Consumption | Typical 60 mW * |
| Device Sleep Power | Typical 5 mW * |
| Allowable Voltage | 3.3 V ± 5 % |
| Reliability (MTBF) | 1.5 million hours |
| Operating Temperature | 0 °C – 70 °C |
| Shock Resistance | 1,500 G for 0.5 ms (half‑sine) |
| Warranty | 5‑year limited or 600 TBW limited |
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Samsung 1TB MZ-V9S1T0BW 990 EVO Plus M.2 2280 NVMe PCIe SSD
| Specification | Detail |
|---|---|
| Application | Client PCs |
| Interface | PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
| Dimension (W×H×D) | 80.15 x 22.15 x 2.38 mm |
| Performance (Sequential Read) | Up to 7,150 MB/s * |
| Performance (Sequential Write) | Up to 6,300 MB/s * |
| Weight | Maximum 9.0 g |
| Rated Capacity | 1,000 GB (1 GB = 1 billion bytes, IDEMA) |
| Form Factor | M.2 (2280) |
| Storage Memory | Samsung V‑NAND TLC |
| Controller | Samsung in‑house controller |
| Cache Memory | Host Memory Buffer (HMB) |
| TRIM Support | Supported |
| S.M.A.R.T Support | Supported |
| Garbage Collection | Auto GC Algorithm |
| Encryption | AES 256‑bit (Class 0) TCG/Opal IEEE1667 |
| WWN Support | Not supported |
| Device Sleep Mode | Supported |
| Random Read (4 KB, QD32) | Up to 850,000 IOPS * |
| Random Write (4 KB, QD32) | Up to 1,350,000 IOPS * |
| Average Power Consumption | Read 4.3 W / Write 4.2 W * |
| Idle Power Consumption | Typical 60 mW * |
| Device Sleep Power | Typical 5 mW * |
| Allowable Voltage | 3.3 V ± 5 % |
| Reliability (MTBF) | 1.5 million hours |
| Operating Temperature | 0 °C – 70 °C |
| Shock Resistance | 1,500 G for 0.5 ms (half‑sine) |
| Warranty | 5‑year limited or 600 TBW limited |
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Description
| Specification | Detail |
|---|---|
| Application | Client PCs |
| Interface | PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
| Dimension (W×H×D) | 80.15 x 22.15 x 2.38 mm |
| Performance (Sequential Read) | Up to 7,150 MB/s * |
| Performance (Sequential Write) | Up to 6,300 MB/s * |
| Weight | Maximum 9.0 g |
| Rated Capacity | 1,000 GB (1 GB = 1 billion bytes, IDEMA) |
| Form Factor | M.2 (2280) |
| Storage Memory | Samsung V‑NAND TLC |
| Controller | Samsung in‑house controller |
| Cache Memory | Host Memory Buffer (HMB) |
| TRIM Support | Supported |
| S.M.A.R.T Support | Supported |
| Garbage Collection | Auto GC Algorithm |
| Encryption | AES 256‑bit (Class 0) TCG/Opal IEEE1667 |
| WWN Support | Not supported |
| Device Sleep Mode | Supported |
| Random Read (4 KB, QD32) | Up to 850,000 IOPS * |
| Random Write (4 KB, QD32) | Up to 1,350,000 IOPS * |
| Average Power Consumption | Read 4.3 W / Write 4.2 W * |
| Idle Power Consumption | Typical 60 mW * |
| Device Sleep Power | Typical 5 mW * |
| Allowable Voltage | 3.3 V ± 5 % |
| Reliability (MTBF) | 1.5 million hours |
| Operating Temperature | 0 °C – 70 °C |
| Shock Resistance | 1,500 G for 0.5 ms (half‑sine) |
| Warranty | 5‑year limited or 600 TBW limited |
